Photoelectric conversion device and its manufacturing method

ABSTRACT

A manufacturing method of a photoelectric conversion device which comprises a plurality n of semiconductor elements U 1  to U n  formed on a substrate side by side and connected in series one after another. On the substrate a first conductive layer is formed and then it is subjected to first laser beam scanning to form first groove G 1 , to G n-1  and electrodes E 1 , to E n  respectively separated by the grooves G to G n-1 . Next, on the substrate a non-single-crystal semiconductor laminate member is formed to cover the grooves G 1  to G n-1  and the electrodes E 1  to E n  and then, the non-single-crystal semiconductor laminate member is subjected to second laser beam scanning to form grooves O 1  to O n-1  respectively extending into the first electrodes E 1  to E n-1  and laminate member Q 1  to Q n . Next, a second conductive layer is formed to continuously extend on the laminate member Q 1  Q n  and extends into the grooves Q 1  to Q n-1  and then, the second conductive layer is subjected to the third laser beam scanning to form isolating portion H 1  to H n-1  and electrodes F 1  to F n  respectively connected to the electrodes E 1  to E n-1  through the coupling portions K 1  to K n-1 .

This is a divisional application of Ser. No. 555,317, filed Nov. 25,1983.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to improvement in or relating to aphotoelectric conversion device in which a number of semiconductorelements are sequentially arranged on a substrate in side-by-siderelation and connected in series. The invention also pertains to amethod for the manufacture of such a photoelectric conversion device.

2. Description of the Prior Art

There has been proposed in U.S. Pat. No. 4,315,096 a photoelecticconverion device of the type that a plurality n (n being an integergreater than one) of semiconductor elements U_(i) to U_(n) aresequentially formed side by side on a substrate having an insulatingsurface and are connected in series one after another. According to thissemiconductor photoelectric conversion device, the semiconductor elementU_(i) (i=1, 2, . . . n) has a first electrode E_(i) formed on thesubstate , a non-single-crystal semiconductor laminate member Q_(i)formed on the first electrode E_(i) to form at least one semiconductorjunction and a second electrode F_(i) formed on the non-single-crystalsemiconductor laminate member Q_(i) in opposing relation to the firstelectrode E_(i). The second electode F_(j+1) of the semiconductorelement U_(j+1) (j=1, 2, . . . (n-1)) is coupled with the firstelectrode E_(j) of the semicondutor element U_(j) through a couplingportion K_(j) formed by an extension K_(j) of the second electrodeF_(j+1). The first electrodes E_(j) and E_(j+1) are isolated by a firstgroove G_(j), and the second electode E_(j+1) extends on thenon-single-crystal semiconductor laminate member Q_(j) and the secondelectrodes F_(j) and F_(j+1) are isolated on the non-single-crystalsemiconductor laminate member Q_(j).

In the photoelectric conversion device mentioned above, the couplingportion K_(j) is shown to be coupled at its surface with the firstelectrode E_(j). In this case, however, in order to obtain good contactbetween the coupling portion K_(j) and the first electrode E_(j), it isnecessary that the area of the contact portion in the lateral directionbe increased. But this makes it impossible to form the photoelectricconversion device with high density.

Moreover, in the photoelectric conversion device of the above said U.S.patent, it is shown that the coupling portion K_(j) makes contact withthe first electrode E_(j) only at the outer side thereof. In this case,the contact area between the coupling portion K_(j) and the firstelectrode E_(j) is extremely small, so that good contact cannot beobtained between them. Therefore, the aforementioned prior art has thedefect that a photoelectric conversion device with low electrical losscannot be obtained with high density.

In the case of the aforementioned conventional photoelectric conversiondevice, the non-single-crystal semiconductor laminate member Q_(j+1)extends into the first groove G_(j). In such a case, in order todecrease leakage between the first and second electrodes E_(j+1) andF₊₁, it is necessary that the resistance of the non-single-crystallaminate member Q_(j+1) in the first groove G_(j) be sufficiently higherthan the resistance of the non-single-crystal semiconductor laminatemember Q_(j+1) between the first and second electrodes E_(j+1) andF_(j+1). But this is not taken into account in the aforesaid U.S.patent. Accordingly, the conventional device cannot provides a highphotoelectric conversion efficiency.

Moreover, according to the aforementioned U.S. patent, no considerationis paid to the fact that the non-single-crystal semiconductor laminatemember Q_(j+1) is deteriorated from the side of the coupling portionK_(j) to the side of the non-single-crystal semiconductor laminatemember Q_(j+1) owing to the coupling portion K_(j) in the manufacturingstep of the coupling portion K_(j) and in the long-term use of thedevice. Accordingly, high photoelectraic conversion efficiency cannot beobtained and the photoelectric conversion efficiency is lowered by thelong-term use.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a novelphotoelectric conversion device which is free from the abovesaiddefects.

In accordance with an aspect of the present invention, as is the casewith the photoelectric conversion device of the aforesaid U.S. patent, aplurality n of semiconductor elements U_(l) to U_(n) are formed on asubstrate having an insulating surface, and the semiconductor elementU_(i) has a first electrode E_(i), a non-single-crystal semiconductorlaminate member Q_(i) and a second electrode F_(i), and the firstelectrode F_(j+1) is coupled with the second electrode E_(j) through acoupling portion K_(j) formed by an extension of the first electrodeF_(j+1).

In accordance with another aspect of the present invention, as in thecase of the aforesaid U.S. patent, the first electrodes E_(j) andE_(j+1) are isolated by a first groove G_(j), and the second electrodeE_(j+1) extends on the non-single-crystal semiconductor laminate memberQ_(j), and the second electrodes F_(j) and F_(j+1) are isolated on thenon-single-crystal laminate member Q_(j).

With the photoelectric conversion device of the present invention,however, a second groove O_(j) is cut in the non-single-crystal laminatemember Q_(j) between the second electrode E_(j+1) and the firstelectrode E_(j) to extend into the first electrode E_(j), and thecoupling portion K_(j) extends into the groove O_(j) to make contactwith the side of the first electrode E_(j) exposed to the second grooveO_(j).

Therefore, it is possible to obtain good contact between the couplingportion K_(j) and the first electrode E_(j). Accordingly, aphotoelectric converion device which is low in electrical loss and hencehigh in photoelectric converison efficiency can be obtained with highdensity.

In accordance with another aspect to the present invention, a grooveO_(j) is cut in the non-single-crystal semiconductor laminate memberQ_(j) to extend between the second electrode F_(j+1) and the firstelectrode E_(j). The groove O_(j) extends into the first electrode E_(j)and the couplig portion K_(j) extends into the groove O_(j) with a widthsmaller than in the non-single-crystal semiconductor laminate memberQ_(j). The coupling portion K_(j) makes contact with the top and theside of the first electrode E_(j) exposed to the groove O_(j).

Therefore, good contact can be obtained between the coupling portionK_(j) and the first electrode E_(j) without increasing the area of thecontact portion therebetween in the lateral direction. Accordingly, theelectrical loss is low, and hence high photoelectric converion eficiencycan be obtained.

In accordance with another aspect of the present invention, thenon-single-crystal semiconductor laminate member Q_(j+1) extends intothe first groove G_(j). In this case, the width of the fist groove G_(j)is selected so that the resistance of the non-single-crystalsemiconductor laminate member Q_(j+1) in the first groove G_(j) betweenthe first electrodes E_(j) and E_(j+1) may be sufficiently higher thanthe resistance of the non-single-crystal semiconductor laminate memberQ_(j+1) between the first electrode E_(j+1) and the second electrodeF_(j+1).

With such an arrangement, although the non-single-crystal semiconductorlaminate member Q_(j+1) extends into the first groove G_(j), theresulting leakage between the first electrode E_(j+1) and the secondelectrode F_(j+1) is little. Therefore, high photoelectric converisonefficiency can be obtained with the semiconductor element Q_(j+1).Further, the structure in which the non-single-crystal semiconductorlaminate member Q_(j+1) extends into the first groove G_(j) permits easyfabrication of the photoelectric conversion device.

Accordingly, the photoelectric conversion device of the presentinvention is high in photoelectric conversion efficiency and easy tomanufacture.

In accordance with another aspect of the present invention, the distancebetween the inner ends of the first and second grooves G_(j) and O_(j)is selected to a required value of 10 to 150 μm.

Therefore, in the manufaturing step of the coupling portion K_(j) orwhile in the long-term use of the device, even if the non-single-crystalsemiconductor laminate member Q_(j) is degraded from the side of thecoupling portion K_(j) to the side of the non-single-crystalsemiconductor laminate member Q_(j+1) owing to the coupling portionK_(j), this degradation does not reach the non-single-crystalsemiconductor laminate member Q_(j+1). In other words, thenon-single-crystal semiconductor laminate member Q_(j+1) is not likelyto be deteriorated by the coupling portion K_(j). Accordingy, thephotoelectric conversion device of the present invention has highphotoelectric conversion efficiency and, even if used for a long periodof time, retains the high photoelectric conversion efficiency.

According to the manufacturing method of the present invention, thesemiconductor elements are formed by a process including the followingsteps (a) to (d):

(a) A first conductive layer, which will ultimately serve as a firstelectrode of each semiconductor element, is formed on the substrate andthe first conductive layer is subjected to first scanning by a laserbeam, thereby providing the first electrode of each semiconductorelement.

(b) A non-single-crystal semiconductor laminate member which willultimately serve as a non-single-crystal semiconductor laminate memberof each semiconductor element having formed therein at least onesemiconductor junction is formed on the substrate in such a manner as tocover the first electrode of each semiconductor element, providing thenon-single-crystal semiconductor laminate member thereof.

(c) The non-single-crystal semiconductors of the semiconductor elementsare subjected to second scanning by a laser beam, thereby cuttingtherein grooves extending into the first electrodes.

(d) A second conductive layer, which will ultimately serve as a secondelectrode of each semiconductor element is formed to extend on thenon-single-crystal semiconductor laminate members and in the grooves,and then the second conductive layer is subjected to third scanning by alaser beam, thereby providing the second electrode of each semiconductorelement.

According to the manufacturing method of the present invention includingthe abovesaid steps, since the coupling portion of the second electrodeof each semiconductor element, formed by an extension of the secondelectrode itself, is connected with the first electrode of theimmediately preceding semiconductor element at the side of the firstelectrode exposed to the groove excellent electrical coupling can beachieved between the second electrode of the former and the firstelectrode of the latter.

Accordingly, it is possible with the manufacturing method of the presentinvention to provide a photoelectric conversion device of highphotoelectric conversion efficiency.

Other objects, features and advantages of the present invention willbecome more fully apparent from the following detailed description takenin conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view schematically illustrating an embodiment of thepresent invention;

FIG. 2 is a schematic sectional view taken on the line II--II in FIG. 1;

FIGS. 3A to 3D are detailed cross-sectional views showing on an enlargedscale parts of the embodiment of the present invention shown in FIG. 2.

FIGS. 4A and 4B are detailed sectional views showing on an enlargedscale other parts of the embodiment of FIG. 1:

FIGS. 5A to 5G are cross-sectional views schematically showing asequence steps involved in the manufacture of the photoelectricconversion device of the embodiment of the present invention depicted inFIGS. 1 to 4;

FIGS. 6A to 6D, 7A to 7E and 8 are schematic cross-sectional views,similar to FIG. 3, illustrating other embodiments of the presentinvention, respectively;

FIG. 9 is a plan view schematically illustrating another embodiment ofthe present invention;

FIG. 10 is a schematic cross-sectional view taken on the line X--X inFIG. 9;

FIGS. 11A and 11B is an enlarged cross-sectional view showing a part ofthe photoelectric conversion device of the present invention illustratedin FIGS. 9 and 10; and

FIGS. 12A to 12H is a schematic cross-sectional view showing a sequencesteps involved in the manufacture of the photoelectric conversion devicedepicted in FIGS. 9 and 10.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A description will be given first, with reference to FIGS. 1 to 3, of anembodiment of the present invention.

The embodiment of the photoelectric conversion device of the presentinvention shown in FIGS. 1 to 3 has a plurality n (n being an integerlarger than one) of semiconductor elements U_(l) to U_(n) formed side byside on a substrate 1.

The substrate 1 has an insulating surface 2.

The substrate 1 may be a light-transparent substrate made of glass,organic synthetic resin or the like, or a flexible sheet as of organicsynthetic resin. It is also possible to employ a non-light-transparentsubstrate of ceramics, organic resin or the like, anon-light-transparent metal substrate having its surface insulated, or aflexible, insulating sheet-like member having an insulating film formedon the surface of a flexible metallic sheet. The substrate 1 is, forexample, rectangular in shape and 20 cm wide and 60 cm long.

In the case of the substrate 1 being the abovesaid, flexible metallicsheet-like member, it is made, for instance, of aluminum or analuminum-base alloy and has a thickness of, for example, 10 to 200 μm,preferably, 50 to 150 μm.

The insulating film formed on the surface of the flexible metallicsheet-like member is, for example, an oxide film resulting fromoxidation of the surface of the sheet-like member. When the flexiblemetallic sheet-like member is made of aluminum or an aluminum-basealloy, the abovesaid oxide film is an aluminum oxide (alumina Al₂ O₃) oran insulating material consisting principally of the aluminum oxide. Theoxide film has a thickness small enough not to impair the flexibility ofthe flexible metallic sheet-like member, for instance, in the range of0.1 to 2 μm, preferably, 0.3 to 1 μm. Such an oxide film can be formedby calorizing the flexible metallic sheet-like member made of aluminumor the aluminum-base alloy.

The semiconductor element U_(i) (i=1, 2, . . . n) on the substrate 1 hasan electrode E_(i) formed on the substrate 1, a non-single-crystalsemiconductor laminate member Q_(i) formed on the electrode E_(i) and anelectrode F_(i) formed on the non-single-crystal semiconductor laminatemember Q_(i) in opposing relation to the electrode E_(i).

The electrode E_(i) is, for example, rectangular in shape and has awidth of 5 to 40 mm, preferably 15 mm and a length slightly smaller thanthe length of the substrate 1.

Electrodes E_(j) (j=1, 2, . . . (n-1)) and E_(j+1) are spaced apart by agroove G_(j) which is shown to extend in the vertical direction inFIG. 1. The groove G_(j) is, for example, 40 μm wide.

The electrode E_(i) may be a single-layer structure as shown in FIG. 3A.

The electrode E_(i) may also be a two-layer structure which comprises alayer 4 making contact with the substrate 1 and a layer 5 formed on thelayer 4 in contact with the non-single-crystal semiconductor laminatemember Q_(i) as shown in FIGS. 3C and D. Also it is possible to employ athree-layer structure having another layer sandwiched between the layers4 and 5 though not shown.

The electrode E_(i) may be a reflective electrode when the electrodeF_(i) is light-transparent. When the electrode E_(i) is the reflectiveelectrode, light incident on the non-single-crystal semiconductorlaminate member Q_(i) on the opposite side from the substrate 1 passesthrough the non-single-crystal semiconductor laminate member Q_(i), thenis reflected by the surface of the electrode E_(i) back to thenon-single-crystal semiconductor laminate member Q_(i) to passtherethrough. The larger the optical path length of the reflected lightin the non-single-crystal semiconductor laminate member Q_(i) is, themore the utilization efficiency of light is raised. From this point ofview, it is preferable that the surface of the electrode E_(i) on theside of the non-single-crystal semiconductor laminate member Q_(i) haveirregularities oblique to planes perpendicular to the substrate surfaceto form a diffuse reflection surface 6 at the boundary between it andthe non-single-crystal semiconductor laminate member Q_(i).

In the case where the electrode E_(i) is reflective, it may be of asingle-layer structure formed by a reflective conductive layer.

In this case, the layer may be one that is formed of aluminum orsilicon, or consisting principally thereof. In the case where theelectrode E_(i) is a reflective electrode and has the two-layerstructure comprised of the layers 4 and 5, in order to simultaneouslysatisfy the requirements that the electrode E_(i) be of highconductivity and high reflectivity and to prevent that when thenon-single-crystal semiconductor laminate member Q_(i) is formed, thematerial of its non-single-crystal semiconductor layer on the side ofthe electrode E_(i) or an impurity contained therein reacts with thematerial of the reflective electrode to form a layer of high contactresistance in the interface between the electrode E_(i) and thenon-single-crystal semiconductor layer Q_(i), it is preferable that thelayer 4 be a reflective conductive layer and the layer 5 a lighttrans-parent metal oxide layer 5.

In the case where the layer 4 of the electrode E_(i) is the reflectiveconductive layer, it may preferably be made of metal. The metal may bestainless steel but, in view of the requirements of high conductivityand high reflectivity for the electrode E_(i), it is preferable toemploy aluminum (Al), silver (Ag), an aluminum-base alloy containing,for example, 0.1 to 2 volume % of silicon, or a silver-base alloy.

When the layer 5 of the electrode E_(i) is a light-transparent metaloxide layer, in order to ensure that the layer 5 be high in conductivityand in transmittance and to prevent that when the non-single-crystalsemiconductor laminate layer Q_(i) is formed, the metallic oxide reactswith the material or impurity of the non-single-crystal semiconductorlayer of the laminate member Q_(i) on the side of the electrode E_(i) toform the abovesaid high contact resistance layer, it is preferable toform the layer 5 of a tin oxide (SnO₂ or SnO) or a metallic oxideconsisting principally of such a tin oxide, for instance, a tin oxidecontaining halogen or, 1 to 10 wt % of antimony oxide in the event thatthe non-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode E_(i)is p-type. In the case where the layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode E_(i)is N-type, it is preferable to use an indium oxide or a metallic oxideconsisting principally of thereof, for instance, an indium oxidecontaining 1 to 10 wt % of tin oxide. In this case, the lighttransparent conductive layer 5 is 300 to 600 A thick.

In the case where the electrode E_(i) is such a two-layer reflectiveelectrode comprising the layer 4 and the layer 5, when the abovesaiddiffuse reflection surface 6 is formed at the boundary between theelectrode E_(i) and the non-single-crystal semiconductor laminate memberQ_(i), it is formed on the surface of the layer 5 on the side of thelaminate member Q_(i).

In the case where the electrode E_(i) is comprised of the layers 4 and 5these layers are a reflective conductive layer and a light-transparentconductive layer to form a reflective electrode, the surface of thelayer 4 may also be formed as the diffuse reflection surface in theinterface between it and the light-transparent conductive layer 5,through not shown.

When the substrate 1 is light-transparent, the electrode E_(i) is formedas a light-transparent electrode.

In such a case, the light-transparent electrode may be a metal oxidelayer.

Where the electrode E_(i) is a single-layer light-transparent electrode,when the non-single-crystal semiconductor layer of thenon-single-crystal laminate member Q_(i) on the side of the electrodeE_(i) is P-type, the electrode E_(i) may preferably of a tin oxide orconsisting principally thereof for the same reasons as given previously.

When the abovesaid non-single-crystal semiconductor layer is N-type, theelectrode E_(i) may preferably be a metal oxide layer formed of anindium oxide or consisting principally thereof.

In the case where the electrode E_(i) has the two-layer structurecomprised of the layers 4 and 5 and is light-transparent, if thenon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode E_(i)is P-type, it is preferable that the layer 5 be a metal oxide layerformed of a tin oxide or consisting principally thereof and the layer 4a metal oxide layer formed of an indium oxide or consisting principallythereof.

When the electrode F_(i) is light-transparent, the electrode E_(i) neednot always be reflective. In this case, if the electrode E_(i) issingle-layer, it may be a layer formed of chrominum or consistingprincipally thereof. Moreover, in the case of the two-layer structure,the layer 4 may be the abovesaid metal oxide layer and the layer 5 maybe layer formed of chrominum or consisting principally thereof.

In the semiconductor element U_(i) formed on the substrate 1, thenon-single-crystal semiconductor laminate member Q_(j+1) (j=1, 2, . . .(n-1)) on the aforesaid electrode E_(j+1) extends laterally from themarginal edge of the electrode E_(j+1) on the opposite side from theelectrode E_(j) to a position on the electrode E_(j) on the side of theelectrode E_(j+1) across the groove G_(j) separating the electrode E_(j)and E_(j+1) making contact with the non-single-crystal semiconductorlaminate member Q_(j).

The non-single-crystal semiconductor laminate member Q₁ formed on theelectrode E₁ extends laterally onto the substrate 1 to cover the sidesurface of the electrode E₁ on the opposite side from the electrode E₂.

Further, laminate member Q_(n) is formed as anon-single-crystal-semiconductor laminate member Q₀ to laterally extendonto the substrate 1 to cover the side surface of the electrode E_(n) onthe opposite side from the electrode E_(n-1).

The non-single-crystal semiconductor laminate member Q_(i) is formed tovertically extend to cover the electrode E_(i). The non-single-crystalsemiconductor laminate member Q_(i) has cut therein a groove O_(i) whichis shown to extend in the vertical direction in FIG. 1. The grooves O₁to O_(n) are formed simultaneously.

The non-single-crystal semiconductor laminate member Q_(i) formed on theelectrode E_(i) may be formed by one or more such two-layer structures,each composed of a P-type or N-type non-single-crystal semiconductorlayer and another non-single-crystal semiconductor layer of the oppositeconductivity type.

Accordingly, the non-single-crystal semiconductor laminate member Q_(i)can be formed to have at least one PN junction.

Furthermore, the non-single-crystal semiconductor laminate member Q_(i)may preferably be formed by one or more three-layer structures, eachcomposed of a P-type or N-type non-single-crystal semiconductor layer 8,an I-type non-single-crystal semiconductor layer 9 and anon-single-crystal semiconductor layer 10 opposite in conductivity typeto the layer 8 as shown in FIG. 3. Accordingly, the non-single-crystalsemiconductor laminate member Q_(i) may preferably be formed to have atleast one PIN junction

The non-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode E_(i)is P-type when the layer of the electrode E_(i) making contact with thenon-single-crystal semiconductor laminate member Q_(i) is formed by atin oxide or metallic oxide consisting principally of the tin oxide asdescribed previously in respect of FIG. 3. When the layer 5 of theelectrode E_(i) making contact with the non-single-crystal semiconductorlaminate member Q_(i) is formed by an indium oxide or metallic oxideconsisting principally of the indium oxide, the non-single-crystalsemiconductor layer of the non-single-crystal semiconductor laminatemember Q_(i) on the side of the electrode E_(i) is N-type.

Accordingly, in the case where the non-single-crystal semiconductorlaminate member Q_(i) has the three-layer structure comprising thenon-single-crystal semiconductor layers 8, 9 and 10 as illustrated inFIG. 3 and the layer of the electrode E_(i) semiconductor laminatemember Q_(i) is formed by the tin oxide or metallic oxide consistingprincipally of the tin oxide, the non-single-crystal semiconductorlayers 8 and 10 are P-type and N-type, respectively. When the lighttransparent conductive layer 5 is formed by the indium oxide or metaloxide consisting principally of indium oxide, the non-single-crystalsemiconductor layers 8 and 10 are N-type and P-type, respectively.

The non-single-crystal semiconductor layers making up thenon-single-crystal semiconductor laminate member Q_(i) may preferably beformed of silicon or a semiconductor consisting principally of siliconbut it may also be formed of other semiconductors.

When the non-single-crystal semiconductor laminate member Q_(i) has thethree-layer structure composed of the non-single-crystal semiconductorlayers 8, 9 and 10, the non-single-crystal semicodncutor layer 8 may beformed, for instance, of silicon to a thickness of 5 to 300 A,preferably 70 to 130 A. Where the non-single-crystal semiconductor layer8 is P-type, for example, boron (B) may be introduced thereinto as aP-type impurity.

The non-single-crystal semiconductor layer 9 can be formed of silicon asis the case with the non-single-crystal semiconductor layer 8 but itsthickness may preferably be larger than that of the layer 8, forinstance, 0.4 to 0.7 μm. The non-single-crystal semiconductor layer 9contains a very small amount of a P-type impurity or does notsubstantially contain either of P-type and N-type impurities and, ifany, their concentrations are negligibly low.

The non-single-crystal semiconductor layer 10 can also be formed ofsilicon as is the case with the non-single-crystal semiconductor layer8. But since the non-single-crystal semiconductor layer 10 is disposedon the side where the light to be converted is incident on thesemiconductor element, it may preferably be formed of a semiconductorwhich has a larger energy band gap than does the semiconductor materialof the non-single-crystal semiconductor layer 8, such as, for example,silicon carbide expressed by Si_(x) C_(1-x) (0<x<1). In this case, thenon-single-crystal semiconductor layer 10 can be formed to a thicknessof 5 to 300 A, typically, in the range of 7 to 130 A.

Incidentally, the aforesaid non-single-crystal semiconductor laminatemember Q₀ has the same structure as the aforementioned one Q_(i).

In the semiconductor element U_(i) formed on the substrate 1, theelectrode F_(i) on the non-single-crystal semiconductor laminate memberQ_(i) is disposed opposite to the electrode E_(i) formed on thenon-single-crystal semiconductor laminate member Q_(i).

In this case, the electrode F_(j+1) extends from a position apart fromthe isolated end portion of the non-single-crystal semiconductorlaminate member Q_(j+1) on the opposite side from the non-single-crystalsemiconductor laminate member Q_(j) onto its isolated end portion on theside of the non-single-crystal semiconductor laminate member Q_(j+1).

The electrode F_(i) extends from a position away from the isolated endportion of the non-single-crystal laminate member Q₁ on the side of thenon-single-crystal semiconductor laminate member Q₂ to the marginal edgeof the substrate 1 to cover the extension of the non-single-crystallaminate member Q₁ on the side surface of the electrode E₁.

On the non-single-crystal semiconductor laminate member Q_(n), anelectrode F₀ similar to the electrode F_(n) is formed to extend from theisolated end portion on the side of the non-single-crystal semiconductorlaminate member Q₀ to the marginal edge of the substrate 1 to cover theside surface of the non-single-crystal semiconductor laminate member Q₀.

The electrodes F_(j) and F_(j+1) are isolated by an isolating portionH_(j). The electrodes F_(j+1) and F₀ are also isolated by an isolatingportion H_(n). The isolating portions H_(i) may be simultaneously formedas grooves as is the case with the grooves G_(i).

The electrode F_(i) may be formed as a single layer as shown in FIG. 3and may also be of the two-layer structure comprised of a layer 21making contact with the non-single-crystal semiconductor laminate memberQ_(i) and a layer 22 formed on the layer 21 as illustrated in FIGS. 3Bto D and 7. Also it is possible to employ such a three-layer structureas depicted in FIG. 8 which comprises the layers 21 and 22 and anotherlayer 23 formed on the layer 2.

The electrode F_(i) may be a transparent conductive layer. When theelectrode F_(i) is a transparent single layer, it may be formed of ametallic oxide. In this case, it is required that the metal oxide behigh in conductivity and in transmittance and, when forming theelectrode F_(i), would not react with the material or impurity of thenon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) on the side of the electrode F_(i)to form a layer which increases the contact resistance between thenon-single-crystal semiconductor laminate member Q_(i) and the electrodeF_(i) or a layer of low trans-mittance. To meet such requirements, whenthe non-single-crystal layer of the non-single-crystal semiconductorlaminate member Q_(i) on the side of the electrode F_(i) is N-type, theelectrode F_(i) may preferably be formed of an indium oxide or metallicoxide consisting principally of the indium oxide, such as, for example,an indium oxide containing 1 to 10 wt % of tin oxide. When thenon-single-crystal layer of the non-single-crystal semiconductor tolaminate layer Q.sub. i on the side of the electrode F_(i) is P-type,the electrode F_(i) may preferably be formed of a tin oxide or metallicoxide consisting principally of the tin oxide. The electrode F_(i) canbe formed, for instance, 300 to 600 A thick.

In the case where the electrode E_(i) is transparent and has thetwo-layer structure composed of the layers 21 and 22, the layer 21making contact with the non-single-crystal semiconductor laminate memberQ_(i) may preferably be a layer formed of the tin oxide or consistingprincipally thereof, or a layer formed of the indium oxide or consistingprincipally thereof as described previously depending on whether thenon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) is P-type or N-type. In this case,it is preferable that when the layer 21 is the layer formed of the tinoxide or consisting principally thereof, the layer 22 be the layerformed of the indium oxide or consisting principally thereof and, whenthe layer 21 is the layer formed of the indium oxide or consistingprincipally thereof, the layer 22 be the layer formed the tin oxide orconsisting principally thereof.

The electrode F_(i) may be a reflective one when the substrate 1 and theelectrode E_(i) are light-transparent. When the electrode F_(i) is thereflective electrode, it is possible to employ the two-layer structurecomprising the layers 21 and 22, the three-layer structure comprisingthe layers 21, 22 and 23 or further multi-layer structure in addition tothe single-layer structure as described previously.

Where the electrode F_(i) is the two-layer structure made up of thelayers 21 and 22, it is preferred that depending on whether thenon-single-crystal semiconductor layer of the non-single-crystalsemiconductor laminate member Q_(i) contacting the layer 21 is P-type orN-type, the layer 21 be the layer formed of the tin oxide or consistingprincipally thereof or the layer formed of the indium oxide orconsisting principally thereof and the layer 22 be a reflectiveconductive layer as of silver or aluminum, as described previously.

When the electrode F_(i) has the three-layer structure composed of thelayers 21, 22 and 23, it is preferable that the layers 21 and 22 be suchlayers as mentioned above and the layer 23 a nickel layer.

The electrode F_(i) need not always be reflective even if the substrate1 and the electrode E_(i) are light-transparent. In such a case, if theelectrode has the two-layer structure comprised of the layers 21 and 22,it is preferred that the layer 21 be such a layer as mentioned above andthe layer 22 a sublimable conductive layer formed of chrominum orconsisting principally thereof.

The electrode F₀ formed to extend on the non-single-crystalsemiconductor laminate member Q₀ has the same structure as the abovesaidelectrode F_(i).

The electrode F_(j+1) of the semiconductor element U_(j+1) (j=1, 2, . .. (n-1)) is coupled with the electrode E_(j) of the semoconductorelement U_(j) through a coupling portion K_(j).

The coupling portion K_(j) extends from the position where the electrodeF_(j+1) is opposite to the electrode E_(j) to the region of theelectrode E_(j) opposite to the electrode F_(j+1), passing through agroove O_(j) by which the non-single-crystal semiconductor laminatemembers Q_(j) and Q_(j+1) are separated. Such a coupling portion K_(j)is formed by an extension of the electrode F_(j+1) formed simultaneouslywith the electrode F_(j+1).

The electrode F₁ of the semiconductor element U₁ extends down to thesurface of the substrate 1 as referred to previously and the extensionconstitutes an external connection terminal 11.

The electrode F₀ extending on the non-single-crystal semiconductorlaminate member Q₀ is coupled with the electrode E_(n) of thesemiconductor element U_(n) through a coupling portion K_(n). In thiscase, the coupling portion K_(n) extends from the position where theelectrode F₀ is opposite to the electrode E_(n) to the region of theelectrode E_(n) opposite to the electrode F₀, passing through a grooveO_(n). Such a coupling portion K_(n) is an extension of the electrode F₀formed simultaneously therewith. The electrode F₀ extends on the sidesurface of the non-single-crystal semiconductor laminate member Q₀ inthe direction reverse from the electrode F_(n) to the marginal edge ofthe substrate 1, and the extending end portion forms a terminal 12 forexternal connection.

The isolated portion H_(j) is formed to extend in the vertical directionin FIG. 1 to go down into the non-single-crystal semiconductor laminatemember Q_(j) to form therein a region 13 underlying the electrodeE_(j+1). The groove O_(j) also extends across that portion of theelectrode E_(j) adjacent to the electrode E_(j+1) in the thickwisedirection. Accordingly, the electrode E_(j) has an isolated portion 14on the side of the electrode E_(j+1).

The isolated portion H_(n) is formed to extend in the vertical directionin FIG. 1 to go down into the non-single-crystal semiconductor laminatemember Q_(n) to form therein the region 13 underlying the electrode F₀.

The groove O_(n) extends across that portion of the electrode E_(n)opposite side from the electrode F₀ in the thickwise direction.Accordingly, the electrode E_(n) has the isolated region 14 on theopposite side from the electrode E_(n-1).

On the substrate 1 is formed a transparent antireflection and protectivefilm 15 to cover the aforesaid semiconductor elements U₁ to U_(n). Inthis case, however, the antireflection and protective film 15 does notextend on the extended portions of the electrodes F₁ and F₀ forming theaforementioned external connection terminals 11 and 12, respectively.

The foregoing is a description of the arrangement of an embodiment ofthe photoelectric conversion device according to the present invention.

Next, a description will be given, with reference to FIGS. 5A to G, ofan embodiment of the photoelectric conversion device manufacturingmethod of the present invention.

In FIGS. 5A to G, parts corresponding to those in FIGS. 1 and 2 areidentified by the same reference numerals and characters and no detaileddescription thereof will be repeated.

The manufacturing method of the photoelectric conversion device shown inFIGS. 5A to G is as follows:

The manufacture starts with the preparation of such a substrate 1 asdescribed previously in respect of FIGS. 1 and 2.

Then, as shown in FIG. 5B, the conductive layer 41 which will ultimatelyform the electrodes E₁ to E_(n) described previously in connection withFIGS. 1 and 2 is formed by a known method on the substrate 1.

In the case where the electrodes E₁ to E_(n) are each formed to have thetwo-layer structure composed of the two layers 4 and 5 as describedpreviously with regard to FIG. 3, the conductive layer 41 is made up ofa layer which will ultimately serve as the layer 4 and another layerwhich ultimately serve as the layer 5, though neither shown nordescribed in detail. The former layer is first formed on the substrate 1by a known method, for example, vapor deposition and then the latterlayer is similarly formed thereon by a known method, for instance, vapordeposition. Next, the conductive layer 41 is scanned by a laser beam(not shown) having a diameter of 30 to 70 μm, typically, 40 μm, by whichthe aforementioned (n-1) grooves G_(i) to G_(n-1) are cut in theconductive layer 41 to form n electrodes E₁ to E_(n) which are separatedfrom adjacent ones of them by the grooves G₁ to G_(n-1), as shown inFIG. 5C. For this scanning, it is possible to employ a laser beam of a1.06 μm wavelength from a YAG laser and a laser beam of a 0.488 or 0.512μm wavelength from an argon laser.

The abovesaid laser beam scanning can be carried out in the air but mayalso be performed in the atmosphere of a gas which reacts with theconductive material of the layer 41 at high temperatures to spatter itfrom the substrate surface. In this case, the gas used may be hydrogenfluride (HF), hydrogen chloride (HCl) (CF₄, CHF₃, CClF₃ or like gas). Inthe case where the laser beam scanning takes place in the air, burrs arelikely to form on the upper marginal edges of the groove G_(j).Accordingly, it is desirable that the laser beam scanning be followed bydeburring through the use of the abovesaid gas or etching with anetchant such as fluoric acid (HF), hydrochloric acid (HCl), C₂ F₃ Cl₄,C₂ F₃ Cl₃ or similar liquid. Moreover, it is possible to accomplish thelaser beam scanning of the conductive layer 41 easily and accurately bythe aid of a computer while monitoring through a video camera device.

Next, a non-single-crystal semiconductor layer formed by a known method,for example, low-pressure CVD on the substrate 1 to fill the grooves G₁to G_(n-1) and to cover the electrode E₁ to E_(n) as shown in FIG. 5D sothat the regions of the layer 42 on the electrodes E₁ to E_(n) may bethe non-single-crystal semiconductor laminate members Q₁ to Q_(n)described previously in respect of FIGS. 1 and 2.

Where the non-single-crystal semiconductor laminate members Q₁ to Q_(n)are each formed as the three-layer structure consisting of thenon-single-crystal semiconductor layers 8, 9 and 10 as describedpreviously with regard to FIG. 3, non-single-crystal semiconductorlayers which will ultimately be used as the non-single-crystal layers 8,9 and 10 respectively, are formed in this order through the use of aknown method, for instance, the low-pressure CVD method, therebyproviding the non-single-crystal semiconductor laminate member 42.

After this, the non-single-crystal semiconductor laminate members Q₁ toQ_(n) are selectively removed by laser beam scanning to cut therein theaforementioned n grooves O₁ to O_(n) as shown in FIG. 5E. In this case,the groove O_(i) (i=1, 2, . . . n) can be formed to extend down to theinsulating film 2 of the substrate 1 across the electrode E_(i) asillustrated. In such a case, the region 14 of the electrode E_(i) isisolated from the other regions. The laser beam scanning of thenon-single-crystal semicondcutor laminate members Q₁ to Q_(n) can takeplace in the air as is the case with the conductive layer 41. It is alsopossible to carry out the laser beam scanning in the atmosphere of a gaswhich reacts with the materials of the non-single-crystal semiconductorlaminate member 42 and the electrodes E₁ to E_(n) at high temperaturesto spatter them from the substrate surface. Also in this case, the gasused is aforesaid gas. In the case where the laser beam scanning of thenon-single-crystal semiconductor laminate members Q₁ to Q_(n) is carriedout in the air, it is desirable that the laser beam scanning be followedby deburring through the use of the aforesaid gas or etching with suchetchants as mentioned previously. The abovesaid laser beam scanning canalso be performed easily and accurately by the aid of a computer whilemonitoring through the video camera device.

The groove O_(j) (j=1, 2, . . . (n-1)) is formed at a position spaced apredetermined distance apart from the groove G_(j) laterally thereof (onthe left thereof in FIG. 5). The abovesaid predetermined distance islarge as compared with the thickness of the non-single-crystalsemiconductor laminate member 42. It is preferable, however, to minimizethis distance. By the aid of a computer the groove O_(j) can be providedin close proximity to the groove G_(j) with high accuracy. This permitsreduction of the area of the substrate 1 occupied by the region 14 ofthe electrode E_(j). It is desirable that the groove O_(n) be formedclosely to the marginal edge of the electrode E_(n) on the opposite sidefrom the electrode E_(n-1) so that the region 14 of the electrode E_(n)may occupy less area of the substrate.

Next, a conductive layer 43, which will ultimately form the electrodesF₁ to F_(n) and F₀ referred to in respect to FIGS. 1 and 2, is formed,for example, vapor deposition on the substrate 1 to cover thenon-single-crystal semiconductor laminate members Q₁ to Q_(n) and tofill the grooves O₁ to O_(n), forming coupling portions K₁ to K_(n). Inthis case, the conductive layer 43 is formed to extend on the substrate1 except both marginal portions in its lengthwise direction but itcovers both marginal portions of the substrate 1 in its widthwisedirection.

Next, the conductive layer 43 is selectively removed by laser beamscanning as is the case with the non-single-crystal semiconductorlaminate members Q₁ to Q_(n). By this laser beam scanning there areformed in the conductive layer 43 n isolating portions H₁ to H_(n), nelectrodes F₁ to F_(n) isolated by the isolating portions H₁ to H_(n-1),respectively, and opposite to the electrodes E₁ to E_(n) across thenon-single-crystal semiconductor laminate members Q₁ to Q_(n),respectively, and an electrode F₀ isolated by the isolating portionH_(n) from the electrode F_(n) and opposite to electrode E_(n). In thiscase, the laser beam scanning is carried out so that the electrodeF_(j+1) may be linked with the electrode E_(j) through the couplingportion K_(j) and so that the electrode F₀ may be linked with theelectrode E_(n) through the coupling portion K_(n).

By the abovesaid laser beam scanning, the isolating portion H_(i) (i=1,2, . . . n) can be formed to extend into the non-single-crystalsemiconductor laminate member Q_(i).

As is the case with the conductive layer 41, the laser beam scanning ofthe conductive layer 43 can be effected in the air and may also becarried out in the atmosphere of a gas which reacts with the materialsof the conductive layer 43 and the non-single-crystal semiconductorlaminate members Q₁ to Q_(n) at high temperatures to spatter them fromthe substrate surface. The gas used in this case may be aforesaid gas.

Also in the case of performing the laser beam scanning of the conductivelayer 43 in the air, it is desirable that the laser beam scanning befollowed by deburring through the use of the aforesaid gas or etchingusing the aforesaid liquid as the etchant.

By the laser beam scanning for the conductive layer 43, the isolatingportion H_(i) can be provided in the form of a groove as illustrated.

The laser beam scanning of the conductive layer 43 can also be carriedout easily and accurately by the aid of a computer while monitoringthrough the video camera device.

Further, the isolating portion H_(i) is formed a predetermined distanceapart from the groove O_(i) laterally thereof (on the left thereof inthe drawing). The abovesaid predetermined distance is large as comparedwith the thickness of the non-single-crystal semiconductor laminatemember 43, but it may preferably be selected as small as possible. Bythe aid of a computer the isolating portion H_(i) can be formed in closeproximity to the groove O_(i) with high precision. This allows reductionof the area of the substrate 1 occupied by the region 13 formed in thenon-single-crystal semiconductor laminate member Q_(i).

Next, a transparent antireflection and protective film 15 is formed by aknown method on the substrate to cover the electrodes F₁ to F_(n) and F₀and the isolating portion H₁ as shown in FIG. 5G.

In the manner described above, the photoelectric conversion device ofthe present invention, shown in FIGS. 1 and 2, is manufactured.

The above is a description of an embodiment of the present invention andan example of its manufacturing method.

According to the photoelectric conversion device of FIGS. 1 and 2, whenlight (not shown) is incident thereon from the side of the substrate 1or the electrodes F₁ to F_(n) each semiconductor elements U_(i) (i=1, 2,. . . n) carries out photoelectric conversion to generate photovoltageacross its electrodes E_(i) and F_(i).

The electrode F_(j+1) (j=1, 2, . . . (n-1)) of the semiconductor elementU_(j+1) is linked with the electrode E_(j) of the semiconductor elementU_(j) through the coupling portion K_(j) and the electrode F₁ of thesemiconductor element U₁ is connected to an external connection terminal11 and the electrode E_(n) of the semiconductor element U_(n) isconnected to an external connection terminal 12 through the couplingportion K_(n) and the electrode F₀.

Accordingly, the semiconductor elements U₁ to U_(n) are sequentiallyconnected in series through the coupling portions K₁ to K_(n-1) andconnected to the external connection terminals 11 and 12. Consequently,upon incidence of light, there is developed across the externalconnection terminals 11 and 12 the photovoltage that is equal to the sumof voltage produced by the semiconductor elements U₁ to U_(n).

In addition, by forming the electrodes E_(i) and F_(i) of thesemiconductor element U_(i) as the reflective electrodes as describedpreviously in respect of FIG. 3, incident light can efficiently beutilized by the semiconductor element U_(i), providing for increasedphotovoltage per unit area of the substrate 1.

Besides, in the case where the layer of the electrode E_(i) contactingthe non-single-crystal semiconductor laminate member Q_(i) is formed asthe aforesaid metal oxide layer, an excellent ohmic contact can be madebetween the electrode E_(i) and the non-single-crystal semiconductorlaminate member Q_(i), so that high photovoltage can be obtained fromthe semiconductor element U_(i) with practically no loss.

These features can be made more marked if the layer of the electrodeE_(i) contacting the non-single-crystal semiconductor laminate memberQ_(i) is formed of a tin oxide or a metallic oxide consistingprincipally thereof, or an indium oxide or a metallic oxide consistingprincipally thereof, depending on whether the non-single-crystalsemiconductor layer of the non-single-crystal semiconductor laminatemember Q_(i) contacting the electrode E_(i) is P-type or N-type.

Where the groove O_(j) cut in the non-single-crystal semiconductorlaminate member Q_(j) is extended into the electrode E_(j) asillustrated, the coupling portion K_(j) extending from the electrodeF_(j+1) makes side-contact with the electrode E_(j) and hence makes goodohmic contact therewith, ensuring to obtain large electromotive forceacross the external connection terminals 11 and 12 with no appreciableloss. This is more marked when the coupling portion K_(j) and theelectrode E_(j) linked with each other through their metal oxide layers.

Since the isolating portion H_(j) is formed to extend into thenon-single-crystal semiconductor laminate member Q_(j) as illustrated,substantially no leakage occurs through the non-single-crystalsemiconductor laminate members Q_(j) between the electrode E_(j) andF_(j+1), ensuring to obtain large electromotive force across theexternal connection terminals 11 and 12.

In the embodiment of FIGS. 1 and 2, the non-single-crystal semiconductorlaminate member Q₁ of the semiconductor element U₁ is formed on theelectrode E₁ to extend onto the substrate 1 passing on the side surfaceof the electrode E₁ on the opposite side from the non-single-crystalsemiconductor laminate member Q₂, and the electrode F₁ is formed on thenon-single-crystal semiconductor laminate member Q₁ to extend onto thesubstrate 1 passing on the side surface and the extended portion is usedas the external connection terminal 11. With such an arrangement, theseries circuit of the semiconductor elements U₁ to U_(n) can easily beconnected at one end to the external connection terminal 11. Thispermits simplification of the construction of photoelectric conversiondevice as a whole.

Further, in the embodiment of FIGS. 1 and 2, the non-single-crystalsemiconductor laminate member Q_(n) is formed to extend on the sidesurface of the electrode E_(n) on the opposite side from the electrodeE_(n-1) towards the substrate 1. The electrode F₀ is formed on thenon-single-crystal semiconductor laminate member Q_(n) to extend to thesubstrate surface and the electrode F₀ is coupled with the electrodeE_(n) through the coupling portion K_(n). And the extended portion ofthe electrode F₀ on the substrate 1 is used as the external connectionterminal 12. Accordingly, the series circuit of the semiconductorelements U₁ to U_(n) can easily be connected at one end to the externalconnection terminal 12, permitting simplification of the overallstructure of the photoelectric conversion device.

A description will be given of other embodiments of the photoelectricconversion device of the present invention.

In the embodiment of the photoelectric conversion device of the presentinvention depicted in FIGS. 1 to 3, the groove O_(j) extends across theelectrode E_(j) to reach the substrate 1, and the coupling portion K_(j)makes contact only with the side of the electrode E_(j) exposed to thegroove O_(j).

In other embodiment of the photoelectric conversion device of thepresent invention, however, as shown in FIG. 6A, the groove O_(j) is notextended into the electrode E_(j) and the coupling portion K_(j) isformed to make contact only with the top of the electrode E_(j) exposedto the groove O_(j).

Further, as shown in FIG. 6B, the width of the groove O_(j) in theelectrode E_(j) is made smaller than in the non-single-crystalsemiconductor laminate member Q_(j) and the coupling portion K_(j) isformed to make contact with the top and side of the electrode E_(j)exposed to the groove O_(j).

Moreover, according to another embodiment, as shown in FIG. 6C thegroove O_(j) is extended into the substrate 1 with a greater width thanin the electrode E_(j), and the coupling portion K_(j) is formed to makecontact with the side and bottom of the electrode E_(j) exposed to thegroove O_(j).

According to another embodiment, as shown in FIG. 6D, the groove O_(j)is extended across the electrode E_(j) as in the case of FIG. 6B andinto the substrate 1 as in the case of FIG. 6C, and the coupling portionK_(j) is formed to make contact with the top, side and bottom of theelectrode E_(j) exposed to the groove O_(j).

In the embodiments illustrated in FIGS. 6A to D, the groove O_(j) caneasily be formed by the same laser beam scanning as that for thenon-single-crystal semiconductor laminate member Q_(j) describedpreviously in respect of FIG. 5 but, in this case, the intensity of thelaser beam is adjusted suitably.

It will be seen that any of the structures of the embodiments providedwith the grooves shown in FIGS. 6A to D possesses the same advantages asare obtainable with the embodiment of FIGS. 1 to 3, though not describedin detail.

In the embodiment of the photoelectric conversion device shown in FIGS.1 to 3, the electrodes F_(j) and F_(j+1) of the semiconductor elementsU_(j) and U_(j+1) are isolated by the isolating portion provided in theform of a groove and the isolating portion H_(j) extends into thenon-single-crystal semiconductor laminate member Q_(i). The embodimentof FIG. 7B corredponding to FIG. 3 is identical in construction with theembodiment of FIGS. 1 to 3 except that the isolating portion H_(j)extends across the non-single-crystal semiconductor laminate memberQ_(i). Such isolating portions H₁ to H_(n) can easily be formed byadjusting the scanning speed and/or power of the laser beam in the laserbeam scanning for the conductive layer 43 described previously inconnection with FIG. 5.

Further, the embodiment of FIG. 7C corresponding to FIG. 3 photoelectricconversion device of the present invention is identical in constructionwith the embodiment of FIGS. 1 to 3 except that the isolating portionH_(j) consists of the groove 16 defined between the electrodes F_(j) andF_(j+1) and the oxide 17 of the non-single-crystal semiconductor formingthe non-single-crystal semiconductor laminate member Q_(j), which isformed in the upper half portion thereof

Such isolating portions H₁ to H_(n) can easily be formed by carrying outin an oxygen atmosphere the laser beam scanning for the conductive layer43 described previously with respect to FIG. 5.

Likewise, the embodiment of FIG. 7D is identical in construction withthe embodiment of FIGS. 1 to 3 except that the isolating portion H_(j)is formed by an oxide 18 which results from oxidation of the conductivematerial forming the electrodes F_(j) and F_(j+1) and separates them asshown. Such isolating portions H₁ to H_(n) can easily be formed by thesame laser beam scanning as that employed for the third embodiment ofFIG. 7C.

The embodiment of FIG. 7A is also identical in construction with theembodiment of FIGS. 1 to 3 except that the isolating portion H_(j) isformed by the groove 16 which hardly extends into the non-single-crystalsemiconductor laminate member Q_(j) but separates the electrodes E_(j)and E_(j+1) as shown. Such isolating portion H₁ to H_(N) can easily beformed by adjusting the scanning speed and/or power of the laser beam inthe laser beam scanning as in the embodiment of FIG. 5.

Another embodiment of FIG. 7E is identical in construction with theembodiment of FIGS. 1 to 3 except that the isolating portion H_(j) hassuch a structure that an oxide layer is formed on the interior surfaceof the groove described previously with respect to FIG. 3.

Such an isolating portion H_(j) can easily be formed by perfoming thelaser beam scanning for the conductive layer 43 mentioned previouslywith regard to FIG. 5 in the oxygen atmosphere as in the embodiment ofFIG. 7D.

It is evident that all the arrangements of the embodiments having theisolating portions H₁ to H_(n), shown in FIGS. 7A to E, have the samefeatures as those of the embodiment of FIGS. 1 to 3, though notdescribed in detail.

In the embodiment of FIGS. 1 to 3, the series circuit of thesemiconductor elements U₁ to U_(n) constituting one photoelectricconversion device on the substrate 1 is connected at one end to theexternal connection terminal 11, which is formed by the extended portionof the electrode E₁ of the semiconductor element U₁ on the substrate 1,and connected at the other end to the external connection terminal 12which is formed by the extended portion of the electrode F₀ on thesubstrate 1 and connected to the electrode E_(n) through the couplingportion K_(n).

In another embodiment of the present invention, however, a plurality a×bof such photoelectric conversion devices, each made up of the nsemiconductor elements U₁ to U_(n) connected in series as shown in FIGS.1 and 2, are arranged in the form of a matrix consisting of a rows and bcolumns as illustrated in FIGS. 9 and 10 corresponding to FIGS. 1 and 2.In FIGS. 9 and 10 reference character M_(rs) (r=1, 2, . . . a and s=1,2, . . . b) indicates each photoelectric conversion device disposed atone of the intersections of rows and columns. The photoelectricconversion devices M₁₁ to M_(1b), M₂₁ to M_(2b), . . . and M_(a1) toM_(ab) are isolated by grooves 26 from adjacent ones of them.

In the embodiment illustrated in FIGS. 9 and 10, the photoelectricconversion device M_(rs) is identical in construction with thephotoelectric conversion device of the embodiment of FIGS. 1 to 3 exceptin the following points:

As shown in FIG. 11A, an electrode E₀ similar to the electrodes E₁ toE_(n) is formed on the substrate 1 on the side of the electrode E₁ ofthe semiconductor element U₁ on the opposite side from the electrode E₁and the electrode E₀ is isolated by a groove G₀ similar to those G₁ toG_(n-1).

Further, the non-single-crystal semiconductor laminate member Q₁ of thesemiconductor element U₁ does not extend from the electrode E₁ to thesubstrate surface but instead it extends across the groove G₀ to themarginal edge of the electrode E₀.

The electrode F₁ of the semiconductor element U₁, which is formed tocover the non-single-crystal semiconductor laminate member Q₁ and extendto the substrate 1 in the first embodiment, is formed to extend to themarginal edge of the non-single-crystal semiconductor laminate member Q₁correspondingly. And the external connection terminal 11 is formed bythe end portion of the electrode F₁ on the non-single-crystalsemiconductor laminate member Q₁ on the opposite side from the electrodeF₂.

Moreover, as shown in FIG. 11B, the non-single-crystal semiconductorlaminate member Q_(n) of the semiconductor element U_(n) is formed toextend to the marginal edge of the electrode E_(n).

The electrode F₀, though formed to cover the non-single-crystalsemiconductor laminate member Q_(n) and to extend to the substrate 1 inthe embodiment of FIGS. 1 to 3, extends to the marginal edge of thenon-single-crystal semiconductor laminate member Q_(n) correspondingly.And the external connection terminal 12 is formed by the end portion ofthe electrode F₀ on the non-single-crystal semiconductor laminate memberQ_(n) on the opposite side from the electrode F_(n).

The above is a description of the abovesaid another embodiment of thephotoelectric conversion device of the present invention.

The photoelectric conversion device of such a construction can beobtained by a manufacturing method similar to that employed for thefabrication of the photoelectric conversion device of the embodiment ofFIGS. 1 to 3.

That is, as shown in FIGS. 12A to H corresponding to FIGS. 5A to G, a×bphotoelectric conversion devices M₁₁ to M_(1b), M₂₁ to M_(2b), . . . andM_(a1) to M_(ab) are formed on the substrate 1 by a sequence of stepssimilar to those shown in FIGS. 5A to G, though not described in detail.Next, as shown in FIG. 12H, the grooves 26 are formed by the same laserbeam scanning as described previously in respect of FIG. 4.

Next, the light transparent antireflection and protective film 15 (notshown) is formed.

In this way, the structure of the embodiment referred to previously inconjunction with FIGS. 9 and 10 is obtained.

The above is a description of the abovesaid another embodiment and itsmanufacturing method.

The photoelectric conversion device of FIGS. and 10 is identical inconstruction with the embodiment of FIGS. 1 to 3 except in the abovesaidpoints, and hence presents the same advantages as those obtainable withthe embodiment of FIGS. 1 to 4, though not described in detail.

Moreover, according to the embodiment of FIGS. 9 and 10, thephotoelectric conversion devices M₁₁ to M_(1b), M₂₁ to M_(2b), . . . andM_(a1) to M_(ab) are formed on the substrate 1 and separated by thegrooves 26. If the substrate 1 is formed by a flexible, insulatingsheet-like member, it can easily be severed at the positions of thegrooves 26 into a×b independent photoelectric conversion devices.

Incidentally, the embodiment of FIGS. 9 and 10 can also be modified andvaried in the same manner as in the second to ninth embodiments of FIGS.6 to 8 which are modifications and variations of the embodiment of FIGS.1 to 4.

While in the foregoing embodiments of the present invention the grooveO_(j) formed in the non-single-crystal semiconductor laminate membersQ_(j) is shown to be a groove which continuously extends in the verticaldirection to completely isolate the non-single-crystal semiconductorlaminate memers Q_(j) and Q_(j+1) mechanically, the groove O_(j) mayalso be formed to discontinuously extend in the vertical direction sothat the non-single-crystal semiconductor laminate members Q_(j) andQ_(j+1) may not completely be isolated by the groove O_(j) from eachother.

It will be apparent that many modifications and variations may beeffected without departing from the scope of the novel concepts of thepresent invention.

What is claimed is:
 1. A method of making a photoelectric conversiondevice, comprising the steps of:forming a first conductive layer on asubstrate having a insulating surface; subjecting the first conductivelayer to first laser beam scanning to form therein (n-1) (where n is aninteger larger than 2) sequentially arranged first grooves G₁ to G_(n-1)and n sequentially arranged first electrodes E₁ to E_(n) separated bythe first grooves G₁ to G_(n-1), respectively; forming on the substratea non-single-crystal semiconductor laminate layer having formed thereinat least one semiconductor junction to cover the first grooves G₁ toG_(n-1) and the first electrodes E₁ to E_(n) so that the regions of thenon-single-crystal semiconductor laminate member on the electrodes E₁ toE_(n) may be non-single-crystal semiconductor laminate members Q₁ toQ_(n) ; subjecting the non-single-crystal semiconductor laminate memberto second laser beam scanning to form non-single-crystal semiconductorlaminate members Q₁ to Q_(n) second grooves O₁ to O_(n-1) extending intothe first electrodes E₁ to E_(n-1), respectively; forming a secondconductive layer which continuously extends on the non-single-crystalsemiconductor laminate members Q₁ to Q_(n) and extends into the groovesO₁ to O_(n-1) to provide coupling portions K₁ to K_(n-1) which areconnected to the first electrodes E₁ to E_(n-1) through the grooves O₁to O_(n-1) ; and subjecting the second conductive layer to third laserbeam scanning to form isolating portion H₁ to H_(n-1) on thenon-single-crystal semiconductor laminate members Q₁ to Q_(n-1),respectively, and n sequentially arranged second electrodes F₁ to F_(n)which are isolated by the isolating portions H₁ to H_(n-1),respectively, and opposite the first electrodes E₁ to E_(n) through thenon-single-crystal semiconductor laminate members Q₁ to Q_(n),respectively, the second electrode F_(j+1) (j=1, 2, . . . (n-1)) beingconnected to the first electrode E_(j) through the coupling portionK_(j).
 2. A method of making a photoelectric conversion device accordingto claim 1, wherein the second groove O_(j) (j=1, 2, . . . (n-1)) isformed a predetermined distance apart from the first groove G_(j) butadjacent thereto, and wherein the isolating portion H_(j) is formed apredetermined distance apart from the first groove G_(j) or the secondgroove O_(j) and adjacent to the second groove O_(j).
 3. A method ofmaking a photoelectric conversion device according to claim 1, whereinthe second groove O_(j) (j=1, 2, . . . (n-1)) is formed to extend acrossthe first electrode E_(j) in the direction of its thickness so that thecoupling portion K_(j) may be connected with the side of the firstelectrode E_(j) which is exposed to the groove O_(j).
 4. A method ofmaking a photoelectric conversion device according to claim 1, whereinthe first laser beam scanning of the first conductive layer is performedin the air.
 5. A method of making a photoelectric conversion deviceaccording to claim 4, wherein the first laser beam scanning is followedby etching through using gas of hydrogen fluoride (HF), hydrogenchloride (HCl), CF₄, CFH₃ or CClF₂, or liquid of fluoric acid (HF),hydrochloric acid (HCl), C₂ F₃ Cl₄ or C₂ F₃ Cl₃.
 6. A method of making aphotoelectric conversion device according to claim 1, wherein the secondlaser beam scanning of the non-single-crystal semiconductor layer iscarried out in the air.
 7. A method of making a photoelectric conversiondevice according to claim 6, wherein the second laser beam scanning isfollowed by etching through using gas of hydrogen fluoride (HF),hydrogen chloride (HCl), CF₄, CHF₃ or CClF₂, or liquid of fluoric acid(HF), hydrochloric acid (HCl), C₂ F₃ Cl₄ or C₂ F₃ Cl₃.
 8. A method ofmaking a photoelectric conversion device according to claim 1, whereinthe third laser beam scanning of the second conductive layer isperformed in the air.
 9. A method of making a photoelectric conversiondevice according to claim 8, wherein the third laser beam scanning isfollowed by etching through using gas of hydrogen fluoride (HF),hydrogen chloride (HCl), CF₄, CHF₃ or CClF₂, or liquid of fluoric acid(HF), hydrochloric acid (HCl), C₂ F₃ Cl₄ or C₂ F₃ Cl₃.
 10. A method ofmaking a photoelectric conversion device according to claim 1, whereinthe third laser beam scanning of the second conductive layer isperformed in the atmosphere of oxygen.
 11. A method of making aphotoelectric conversion device according to claim 1, wherein the secondlaser beam scanning of the second conductive layer is performed so thatthe isolating portion H_(j) (j=1, 2, . . . (n-1)) may extend into thenon-single-crystal semiconductor laminate member Q_(i).